The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Feb. 27, 2002
Applicant:
Inventors:
Timothy J. Davis, Trumansburg, NY (US);
Scott G. Adams, Ithaca, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/1302 ;
Abstract
Deep reactive ion etching creates a single mask MEMS structure 20-50 &eegr;m deep on the top surface of a wafer. Thereafter, a bottom surface etch cooperates with trenches formed in the MEMS structure to provide through trenches which release large area structures of arbitrary shape and having a thickness up to that of the wafer. The released structure is supported in the wafer by MEMS support beams and motion is detected and affected by MEMS sensors and actuators, respectively.