The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Sep. 17, 2002
Hiroki Ohbo, Hirakata, JP;
Nobuhiko Hayashi, Osaka, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
An AlGaN buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, an MQW active layer, and a p-AlGaN cladding layer are formed in this order on a sapphire substrate. A ridge portion is formed in the p-AlGaN cladding layer, and a p-GaN cap layer is formed on an upper surface of the ridge portion. An n-AlGaN first regrown low-temperature buffer layer and an n-AlGaN current blocking layer are formed in this order on a flat portion and on side surfaces of the ridge portion in the p-AlGaN cladding layer. A p-AlGaN second regrown low-temperature buffer layer and a p-GaN contact layer are formed on the n-AlGaN current blocking layer and on the upper surface of the ridge portion.