The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Nov. 07, 2002
Matthew J. Carey, San Jose, CA (US);
Bruce A. Gurney, San Rafael, CA (US);
Yongho Ju, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk drive, has a titanium oxynitride (TiO N ) layer as the single-layer tunnel barrier or as one of the layers in a bilayer tunnel barrier. In a bilayer barrier the other barrier layer is an oxide or nitride of Al, Si, Mg, Ta, [[Si]] and Y, such as Al O , AlN, Si N , MgO, Ta O , TiO , or Y O . The Ti barrier material can be alloyed with other known metals, such as Al and Mg, to produce barriers with TiAlO N and TiMgO N compositions.