The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
May. 30, 2002
Won-Ju Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
An ion implanter having means for scanning an ion beam on a wafer is provided, wherein the scanning means, on which the wafer is mounted, moves the wafer in a region where the ion beam is irradiated. A detecting means, which is fixedly mounted adjacent to the scanning means, detects the ion beam that is overly scanned out of the scanning means. The detecting means has an inclined surface so that a portion of the detecting means adjacent to the scanning means is positioned below a surface of the wafer that is disposed on the scanning means. Accordingly, the ion implanter may prevent the wafer in the scanning means from being polluted with sputtering particles generated from a surface of the scanning means.