The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Dec. 11, 2000
John H Jefferson, Dera Malvern, GB;
Timothy J Phillips, Dera Malvern, GB;
QinetiQ Limited, London, GB;
Abstract
A quantum wire field-effect transistor having at least one, one-dimensional, elongate conducting means ( ) provided by at least a first semiconductor layer surrounded by a wider bandgap, second semiconductor layer ( ) and extending between source ( ) and drain ( ) electrodes, and in which there is provided a backgate structure ( ) to control conduction in the elongate conducting means. The transistor can be a Single Electron Transistor (SET) wherein two adjacent gate electrode ( ) are disposed over the elongate conducting means to induce a quantum dot ( ) therein, and it can be made with the first semiconductor layer material as GaAs and the second semiconductor layer material as AlGaAs. A method of making the transistor involves preferentially growing the elongate conducting means at the bottom of a groove ( ) lined with second semiconductor layer ( ).