The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Apr. 30, 2003
Applicant:
Inventor:
Shunsuke Baba, Kanagawa, JP;
Assignee:
Oki Electric Industry CO, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/978 ;
U.S. Cl.
CPC ...
H01L 2/978 ;
Abstract
In order to apply a predetermined voltage to a silicon layer ( ) to control a threshold voltage, a second gate electrode ( ) is provided on the surface of the silicon layer ( ) with a gate oxide film (insulating layer) ( ) interposed therebetween so as to fall within the same surface of the silicon layer ( ) as a surface on which a source ( ) and a drain ( ) placed in the silicon layer ( ) and a first gate electrode ( ) are disposed.
Baba, Shunsuke. (2004). Soi mosfet device having second gate electrode for threshold voltage control (U.S. Patent No. 6753579). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6753579
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile