The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Jul. 02, 2002
Samsung Electronics Co., Ltd., Kyungki, KR;
Abstract
A floating trap type non-volatile memory device and fabrication method thereof are provided. The floating trap type device comprises a substrate, a gate electrode formed on the substrate. A charge storage layer is interposed between the substrate and the gate electrode. A tunneling layer is interposed between the substrate and charge storage layer. The charge storage layer comprises a material having a narrower band gap than silicon nitride. The charge storage layer preferably formed of tetrahedral amorphous carbon. The potential barrier between the charge storage layer and the tunneling layer is increased by using the tetrahedral amorphous carbon as the charge storage layer. Therefore, the charge retention characteristic of the floating trap type device is improved.