The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Aug. 05, 2002
Elizabeth A. Kolawa, Bradbury, CA (US);
Jagdishbhai U. Patel, San Gabriel, CA (US);
Jean-Pierre Fleurial, Duarto, CA (US);
Abstract
A power source converts &agr;-particle energy into electricity by coulomb collision in doped diamond films. Alpha particle decay from curium-244 creates electron-hole pairs by freeing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the N- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of &agr;-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from &agr;-particle emission. Additional insulation or isolation may be provided in order to prevent damage from &agr;-particle collision. N-doped silicon may be used instead of N-doped diamond.