The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Oct. 15, 2002
Applicant:
Inventors:
Misbahul Azam, Gilbert, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
Daniel G. Hannoun, Chandler, AZ (US);
Assignee:
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A transistor ( ) is formed with a low resistance trench structure that is utilized for a gate ( ) of the transistor. The low resistance trench structure facilitates forming a shallow source region ( ) that reduces the gate-to-source capacitance.
Quick Actions:
Azam, Misbahul. (2004). Method of forming a low resistance semiconductor device and structure therefor (U.S. Patent No. 6753228). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6753228
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