The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Jul. 14, 2003
Applicant:
Inventors:
Chin-Yuan Hsiao, Taipei Hsien, TW;
Yinan Chen, Taipei, TW;
Assignee:
Nanya Technology Corp., Tao-Yuan Hsien, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of forming a gate structure. A substrate having thereon at least one stacked gate is provided. The stacked gate has a gate insulating layer, a polysilicon layer, a silicate layer, and a cap layer. A sacrificial layer is deposited on the substrate, and etched backed to expose the cap layer and an upper portion of the silicate layer. Then, the exposed silicate layer is partially removed to form a recess. The recess is filled with silicon nitride. Finally, a spacer is formed on walls of the stacked gate.