The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Jun. 25, 2002
Takuya Komoda, Sanda, JP;
Tsutomu Ichihara, Hirakata, JP;
Koichi Aizawa, Neyagawa, JP;
Yoshiaki Honda, Souraku-gun, JP;
Yoshifumi Watabe, Tondabayashi, JP;
Takashi Hatai, Neyagawa, JP;
Toru Baba, Shijonawate, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
An electron source has an n-type silicon substrate , a drift layer formed on one surface of the substrate , and a surface electrode formed on the drift layer . A voltage is applied so that the surface electrode becomes positive in polarity relevant to the substrate , whereby electrons injected from the substrate into the drift layer drift within the drift layer , and are emitted through the surface electrode . In a process for manufacturing this electron source , when the drift layer is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.