The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Feb. 20, 2003
Yeong-Der Yao, Taipei, TW;
Jyh-Shen Tsay, Taipei, TW;
Heng-Yun Nieh, Taipei, TW;
Cheng-Shiu Yang, Taipei, TW;
Academia Sinica, Taipei, TW;
Abstract
According to the method for preparation of ultrathin magnetic layer on semiconductor of this invention, a non-ferromagnetic metal buffer layer thinner than 40 ML is formed on the semiconductor substrate on which the magnetic layer is to be prepared. The thickness of the non-ferromagnetic metal buffer layer may be 0.5-9 ML, preferably 1-8 ML, most preferably 1.5-6 ML. Thereafter, the magnetic layer is formed on said non-ferromagnetic metal buffer layer. The thickness of the magnetic layer so prepared may be less than 40 ML, close to the limitation of ultrathin. Material for the non-ferromagnetic metal buffer layer is preferably a metal or metal alloy that is immiscible with the magnetic layer when the magnetic layer is formed on the buffer layer. In the embodiments of the present invention, the non-ferromagnetic metal is silver, while material of the magnetic layer is cobalt. This invention also discloses the magnetic structure so prepared.