The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
May. 21, 2002
Hong Seok Kim, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
The invention relates to an alignment measuring method of a photolithography process by which a misalignment degree for each shot region of a wafer is indexed to improve the accuracy of determining the possibility of overlay defects. The method includes: measuring the overlay state of each pattern image transcribed to every shot region of a wafer; counting the number of shot regions judged as overlay defects with the misalignment amount of each measured shot region; calculating in percentage the number of shot regions judged as overlay defects against the number of total shot regions of the wafer; and comparing the calculated percentage value with a preset value to determine the possibility of rework. Accordingly, it is possible to estimate the misalignment amount of the unmeasured shot regions with that of the sampled and measured shot regions, determine the possibility of overlay defects of each shot region and determine quickly and conveniently the need to rework, thereby shortening the time of manufacturing semiconductor devices, improving reliability of judgment on rework due to exclusion of a worker's personal judgment and making progress in cost effectiveness of rework and manufactured yield.