The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2004

Filed:

Aug. 08, 2002
Applicant:
Inventors:

Richard C. Blish II, Saratoga, CA (US);

Susan Xia Li, Fremont, CA (US);

David S. Lehtonen, Austin, TX (US);

J. Courtney Black, San Jose, CA (US);

Don C. Darling, San Jose, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 3/00 ;
U.S. Cl.
CPC ...
G21K 3/00 ;
Abstract

An apparatus for x-raying a semiconductor device which includes semiconductor material and conductive material, the apparatus including a source of x-rays, a filter for receiving x-rays from the source of x-rays and allowing transmission of x-rays to the device, the filter having an atomic number greater than the atomic number of the conductive material of the device, and an x-ray imager for receiving x-rays from the device.


Find Patent Forward Citations

Blish II, Richard. (2004). Prevention of parametic or functional changes to silicon semiconductor device properties during x-ray inspection (U.S. Patent No. 6751294). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6751294

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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