The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Jun. 12, 2002
Kazutomi Mori, Tokyo, JP;
Shintarou Shinjo, Tokyo, JP;
Hiroyuki Joba, Tokyo, JP;
Yoshinori Takahashi, Tokyo, JP;
Yukio Ikeda, Tokyo, JP;
Tadashi Takagi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Between resistors and an NPN bipolar transistor are interposed PNP bipolar transistors forming a current mirror that uses a collector current of the NPN bipolar transistor as a reference current, and determines a collector current of an NPN bipolar transistor . This makes possible to design a size ratio A of the PNP bipolar transistors so as to approximate a voltage drop &Dgr;Vb to a value close to zero, and to suppress the voltage drop &Dgr;Vb of the base voltage Vb accordingly to achieve a high power output and high efficiency when a high frequency input signal Pin increases and generates a base rectified current.