The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Oct. 03, 2002
Katsuji Satomi, Osaka, JP;
Hiroyuki Yamauchi, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor memory device has a SRAM memory cell comprising: a first inverter including a first nMOS transistor and a first pMOS transistor; a second inverter including a second nMOS transistor and a second pMOS transistor; a third nMOS transistor; and a fourth nMOS transistor, wherein a first diffusion region forming the first and third nMOS transistors and a second diffusion region forming the second and fourth nMOS transistors, respectively, are arranged in linear shapes without having any bent part, and driving capabilities of the first and second nMOS transistors are higher than those of the third and fourth nMOS transistors.