The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Mar. 15, 2002
Yong-Sik Yim, Kyunggi-do, KR;
Jung-Dal Choi, Kyunggi-do, KR;
Hong-Suk Kwack, Kyunggi-do, KR;
You-Cheol Shin, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A non-volatile memory device having a MONOS (Metal-oxide-nitride-oxide-semiconductor) gate structure is provided. This device includes a selection transistor and a cell transistor including a cell gate insulation layer formed in a cell array area and a low-voltage MOS transistor having a low-voltage gate insulation layer and a high-voltage MOS transistor having a high-voltage gate insulation layer formed in a peripheral circuit area. The low-voltage gate insulation layer is thinner than the high-voltage gate insulation layer. The low-voltage gate insulation layer can also be thinner than the equivalent thickness of the cell gate insulation layer.