The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Feb. 05, 2002
Applicant:
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/776 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/776 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ; H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/362 ;
Abstract
A silicon-on-isolator CMOS integrated circuit device includes a semiconductor substrate, an isolation layer formed over the semiconductor substrate, an n-type MOS transistor having a gate, a drain region, and a source region formed over the isolation layer, and a p-type MOS transistor having a gate, a drain region, and a source region formed over the isolation layer and contiguous with the n-type MOS transistor, wherein the n-type MOS transistor and the p-type MOS transistor form a silicon controlled rectifier to provide electrostatic discharge protection.
Ker, Ming-Dou. (2004). Scr devices in silicon-on-insulator cmos process for on-chip esd protection (U.S. Patent No. 6750515). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6750515
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile