The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
May. 28, 2002
Applicant:
Inventors:
Herbert Benzinger, München, DE;
Frank Richter, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A DRAM cell configuration is described in which a memory cell in each case has a storage capacitor and a read-out transistor. For connecting to the read-out transistor, a buried strap contact is produced by outdiffusion of dopants from the electrode of the storage capacitor. The buried strap contact is superposed by the implantations of the source/drain region of the read-out transistor, so that the implantations of the source/drain region form the boundary of the space charge zone of a p/n junction of the memory cell.