The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Dec. 15, 2000
Applicant:
Inventors:
Masaaki Noda, Shiga, JP;
Teruhisa Ikuta, Nara, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ;
Abstract
A high-voltage semiconductor device includes: a drain region; a metal electrode electrically connected to the drain region; and electrically floating plate electrodes formed on a field insulating film over a semiconductor regionm. Parts of the metal electrodes are extended onto the interlevel dielectric film and located over the respective plate electrodes. Each part of the metal electrode is capacitively coupled to associated one of the plate electrodes.