The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Mar. 21, 2002
Yasuo Tarui, Setagaya-ku, Tokyo, JP;
Kazuo Sakamaki, Tokyo, JP;
Other;
Abstract
A ferroelectric body transistor having a structure of MFMIS (conductor film) -ferroelectric film-conductor film-insulating film-semiconductor) including a gate insulator capacitor having an MIS structure, a low dielectric constant layer restraining layer interposed between an insulating film made of a material having a high inductive capacity of CeO and a semiconductor substrate to thereby restrain a low dielectric constant layer of SiO or the like from being produced at an interface between the insulating film and the semiconductor substrate and restrain a capacitance from being reduced. An area of the gate insulator capacitor can be reduced and highly integrated formation is provided.