The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Mar. 15, 2002
Applicant:
Inventor:
Hiroji Kawai, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ;
U.S. Cl.
CPC ...
H01L 3/10328 ;
Abstract
A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for an etchant is formed in the side of these layers sandwiching an anti-growing film composed of SiO . Thus, the etchant flows through the flow-through hole, the anti-growing film and the separating layer are etched, and the base substrate is easily isolated.