The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Feb. 06, 2002
Applicant:
Inventors:
Martin Mitan, Phoenix, AZ (US);
David P. Pivin, Jr., Phoenix, AZ (US);
James W. Mayer, Phoenix, AZ (US);
Terry L. Alford, Phoenix, AZ (US);
Assignee:
Arizona Board of Regents, Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
Direct focused ion beam (FIB) mixing is given as a method for patterning of metal silicide structures on a silicon surface. This technique allows the fabrication of submicron structures without the use of resist-based lithography methods. VLSI containing metal silicide connects, interconnects and structures may be prepared by the method. Fast semiconductor devices having good circuit speed and reduced RC time delay including the technologies MEMS, MOSFET, CMOS, pMOS, nMOS and BiCMOS result.