The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Sep. 29, 1999
Applicant:
Inventor:
Thomas Schafbauer, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/1425 ; H01L 2/14163 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/1425 ; H01L 2/14163 ; H01L 2/144 ;
Abstract
A method of forming a semiconductor structure (see e.g., FIG. ) includes forming a silicon (e.g., polysilicon) layer . The silicon layer is patterned and etched so that at least one sidewall is exposed. An oxygen bearing species (e.g., O ) is then implanted into the sidewall of the silicon layer . In the preferred embodiment, the oxygen bearing species is implanted at an acute angle relative to the plane of the silicon layer
Schafbauer, Thomas. (2004). Semiconductor device formed with an oxygen implant step (U.S. Patent No. 6750122). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6750122
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile