The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Mar. 28, 2002
Bong-Cheol Kim, Cheongiu-shi, KR;
Protech Inc., , KR;
Abstract
The present invention relates to an apparatus and a method for forming a single crystalline nitride substrate, and more particularly, to an apparatus and a method for preventing cracks from being generated in a single crystalline nitride substrate. A method for forming a compound semiconductor substrate includes the steps of: a) preparing a parent substrate; b) forming a single crystalline film on the parent substrate in a reacting chamber; c) maintaining the single crystalline film in a predetermined temperature which is higher than a room temperature; and d) illuminating laser beam on a backside of the parent substrate and separating the single crystalline film from the parent substrate. Accordingly, the present invention provides a large single crystalline nitride substrate, by preventing cracks caused by the lattice mismatch with the parent substrate.