The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Apr. 08, 2002
Applicant:
Inventors:
Fred TK Cheung, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01I 2/120 ; H01L 2/148 ;
U.S. Cl.
CPC ...
H01I 2/120 ; H01L 2/148 ;
Abstract
A semiconductor device which includes a precision high-K dielectric and formed on a semiconductor substrate and a method of forming the same. The semiconductor device includes at least one dielectric layer having a dielectric constant greater than SiO . The at least one dielectric layer is deposited by atomic layer deposition (ALD). The ALD deposited layer has precise uniformity, thickness and abrupt atomic interfaces.