The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2004

Filed:

May. 29, 2002
Applicant:
Inventors:

Jeong Dong Noh, Busan, KR;

Seung Hee Lee, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1343 ;
U.S. Cl.
CPC ...
G02F 1/1343 ;
Abstract

The present invention comprises an upper substrate; a data bus line and a storage capacitance bus line on a lower substrate; a gate bus line at the position of bisecting the unit pixel; a thin film transistor on the gate bus line; a counter electrode; and a pixel electrode. The pixel electrode comprises a frame shaped body unit formed on the edge in counter electrode and a plurality of slant slits arranged with a regular distance to divide the body unit into several parts, forming a predetermined angle with the gate bus line. The angle of slant slits in the pixel electrode is symmetric with respect to the gate bus line. The storage capacitance bus line is partially overlapped with both the upper edge of pixel electrode in one unit pixel and the lower edge of pixel electrode in the closest unit pixel. According to the present invention, the black matrix area is reduced by eliminating or minimizing the light leakage through modifying the pixel structure, thereby improving the aperture ration and transmittance.


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