The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Oct. 05, 2001
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract
A defect-free film is formed on a surface of a protrusive electrode. An immersion Au film is formed on the surface of the protrusive electrode, after a gap which an immersion Au plating liquid can enter evenly is formed between a protrusive electrode made of Ni or a Ni alloy on an electrode pad made of Al or mainly made of Al and a protective coat by etching.
Yamaguchi, Shinji. (2004). Semiconductor device and method of manufacturing of the same (U.S. Patent No. 6747351). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6747351
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile