The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Jan. 14, 2002
Kazuhisa Sakamoto, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
P-wells ( ) are formed in, for example, a matrix in an N-type semiconductor layer ( ). At an outer periphery of each of the P-wells ( ) is formed, for example, a rectangular ring-shaped N -type diffused source region ( ), between which and an N-type semiconductor layer ( ) which provides a drain region ( ) is formed a channel region ( ). A source electrode ( ) is formed in such a manner as to be contact with the center portion of each of the P-wells ( ) and the source region ( ) in such a construction that a contact portion ( ) of the P-well with the source electrode consists of P -type regions and N -type regions formed alternately. As a result, it is possible to rapidly eliminate the minority carrier generated in the P-well owing to a counter electromotive force etc., thus speeding the switching operations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile