The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Apr. 26, 2002
Nam-Kyeong Kim, Seoul, KR;
Seung-Jin Yeom, Seoul, KR;
Woo-Seok Yang, Seoul, KR;
Soon-Yong Kweon, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungbki-di, KR;
Abstract
A ferroelectric memory device and a method for manufacturing the same is disclosed. Because a (Bi La )Ti O (BLT) layer, which can be crystallized in relatively low temperature, is used in a capacitor, the electrical characteristics of the ferroelectric capacitor can be improved. The method for manufacturing ferroelectric memory device includes the steps of forming a first conductive layer for a bottom electrode on a semiconductor substrate, forming the (Bi La )Ti O ferroelectric layer, wherein 'x' representing atomic concentration of Bi ranges from about 3.25 to about 3.35 and 'y' representing atomic concentration of La ranges from about 0.70 to about 0.90 and forming a second conductive layer for a top electrode on the (Bi La )Ti O ferroelectric layer.