The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Jun. 12, 2003
Applicant:
Inventors:
Mariko Takayanagi, Kawasaki, JP;
Hironobu Fukui, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
A semiconductor device has a semiconductor substrate, a first transistor having a first gate electrode formed of a polycrystalline silicon germanium film as formed above said semiconductor substrate, and a second transistor having a second gate electrode which is formed of a polycrystalline silicon germanium film as formed above the semiconductor substrate and which is different in concentration of germanium from the first gate electrode.