The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
May. 05, 2003
Takayuki Shimozono, Kagoshima, JP;
Ritsuo Takizawa, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
White defects caused by a dark-current of a solid-state imaging device is reduced by effectively bringing out gettering capability of a buried getter sink layer. A buried getter sink layer is formed by introducing to the semiconductor substrate a substance of a second element which is a congener of a first element composing a semiconductor substrate, a crystal growth layer is formed by crystal growing a substance of the first element on a surface of the semiconductor substrate, and a solid-state imaging element is formed inside and on the crystal growth layer at a lower temperature than that in the case of forming an extrinsic getter sink layer by introducing a substance of a third element of a different group from the first element on a back surface of the semiconductor substrate. Alternately, a solid-state imaging element is formed at a lower temperature than that in the case of forming an extrinsic getter sink layer on a surface of the crystal growth layer by oxidization in an atmosphere of a gas containing hydrochloric acid.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile