The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Apr. 28, 2003
Kee Jeung Lee, Seoul, KR;
Dong Jun Kim, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ich'on, KR;
Abstract
Disclosed are a capacitor for semiconductor devices capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. The capacitor for semiconductor memory devices according to the present invention includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline Ta O N layer, and the total of x, y, and z in the crystalline Ta O N layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile