The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Apr. 02, 2002
Thomas Skotnicki, Crolles Montfort, FR;
Emmanuel Josse, La Motte Servolex, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
The vertical insulated gate transistor includes, on a semiconductor substrate, a vertical pillar incorporating one of the source and drain regions at the top, a gate dielectric layer situated on the flanks of the pillar and on the top surface of the substrate, and a semiconductor gate resting on the gate dielectric layer. The other of the source and drain regions is in the bottom part of the pillar PIL and the insulated gate includes an isolated external portion resting on the flanks of the pillar and an isolated internal portion situated inside the pillar between the source and drain regions. The isolated internal portion is separated laterally from the isolated external portion by two connecting semiconductor regions PL , PL extending between the source and drain regions, and forming two very fine pillars.