The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2004

Filed:

Sep. 03, 2003
Applicant:
Inventors:

Pieter J. Van der Zaag, Pyrford, GB;

Steven C. Deane, Redhill, GB;

Stephen J. Battersby, Haywards Heath, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer ( ) of semiconductor material is provided over an insulated gate electrode ( ). A negative resist ( ) is used to define source and drain electrodes ( ) which extend over the insulating layer ( ) up to the step formed therein adjacent an edge ( A) of the gate electrode ( ).


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