The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Oct. 18, 2002
Applicant:
Inventors:
Assignee:
RWE Schott Solar GmbH, Alzenau, DE;
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 ;
U.S. Cl.
CPC ...
B05D 5/12 ;
Abstract
The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiN O with 0<x≦1.5 and 0≦y≦2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiN O layer. The concentration C of the dopants is 1×10 cm ≦C≦10 cm .