The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Jun. 22, 2001
R. Bruce Doak, Tempe, AZ (US);
Christopher T. Burns, Tempe, AZ (US);
Dirk C. Jordan, Tempe, AZ (US);
Arizona Board of Regents, Tempe, AZ (US);
Abstract
Semiconductor nitride layers are produced using a corona discharge supersonic free-jet source producing an activated nitrogen molecule beam impacting a semiconductor substrate in the presence of a group III metal or impacting an oxide layer on a semiconductor substrate. The activated nitrogen molecules are of the form N A &Sgr; . Apparatus for producing the nitride layer on the substrate includes the corona discharge free-jet source, a skimmer to collimate the N beam and succeeding stages interconnected by collimators and evacuated to draw off background gases.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile