The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2004

Filed:

Mar. 15, 2002
Applicant:
Inventors:

George K. Konstadinidis, Sunnyvale, CA (US);

Harry Ma, Union City, CA (US);

Alan P. Smith, Santa Clara, CA (US);

Kevin J. Wu, San Jose, CA (US);

Assignee:

Sun Microsystems, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/750 ;
U.S. Cl.
CPC ...
G06F 1/750 ;
Abstract

Performance of an integrated circuit design, whether embodied as a design encoding or as a fabricated integrated circuit, can be improved by selectively substituting low V transistors in a way that prioritizes substitution opportunities based on multi-path timing analysis and evaluates such opportunities based on one or more substitution constraints. By valuing, in a prioritization of substitution opportunities, contributions for all or substantially all timing paths through the substitution opportunity that violate a max-time constraint, repeated passes through a timing analysis phase can be advantageously avoided or limited. In addition, by recognizing one or more constraints on actual low V substitutions, particular noise-oriented constraints, the scope of post substitution design analysis can be greatly reduced. In some realizations, substitutions are performed so long as a leakage current budget is not expended. As a result, integrated circuit designs prepared in accordance with the described techniques may exhibit substantial cycle time improvements through judicious selection of gate instances for substitution. In some realizations, improved yields of high grade parts may result.


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