The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Apr. 03, 2002
Toshiaki Kuniyasu, Kaisei-machi, JP;
Toshiaki Fukunaga, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-Ken, JP;
Abstract
A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In Ga P lower cladding layer, an n-type or i-type In Ga As P optical waveguide layer, an i-type GaAs P tensile-strain barrier layer, an In Ga As P compressive-strain quantum-well active layer, an i-type GaAs P tensile-strain barrier layer, a p-type or i-type In Ga As P upper optical waveguide layer, a p-type In Ga P first upper cladding layer, a GaAs etching stop layer, a p-type In Ga P second upper cladding layer, and a p-type GaAs contact layer are grown on a plane of an n-type GaAs substrate. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 &mgr;m from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.