The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Sep. 27, 2002
Kaoru Yamamoto, Yamatokoriyama, JP;
Nobuhiko Ito, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a virtual ground type nonvolatile semiconductor storage device capable of effectively suppressing a leak current to the adjacent cell and thereby achieving high-speed read. During read operation, a ground potential GND is applied to a bit line SBL connected to the source region of one memory cell transistor MC subjected to read. Moreover, a read drain bias potential Vread is applied to a bit line SBL connected to the drain region of the memory cell transistor MC . A bit line SBL connected to the drain region of a first adjacent memory cell transistor MC is put into a floating state. A potential Vdb equal to the read drain bias potential Vread is applied to a bit line SBL connected to the drain region of a second adjacent memory cell transistor MC