The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Nov. 20, 2001
Yi-Hua Chang, Hsinchu Hsien, TW;
Hung-Yi Chang, Hsinchu, TW;
Faraday Technology Corp., Hsinchu, TW;
Abstract
An electrostatic discharge protection circuit is connected to a bonding pad and a pre-stage driver. The electrostatic discharge protection circuit includes a PMOS transistor and a NMOS transistor and both connect in series. A source/drain region of the PMOS transistor is connected to a system power source, and the gate electrode is connected to a pre-stage drive, and the other source/drain region is connected to a source/drain region of the NMOS transistor, which is also connected to the bonding pad. Another source/drain region of the NMOS transistor is ground. The gate electrode of the NMOS transistor receives an output of the pre-stage driver. Another PMOS transistor is connected to a capacitor and is also connected to the source/drain region of a system power source and the gate electrode of the NMOS transistor.