The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Feb. 21, 2003
Reading Maley, San Francisco, CA (US);
Sun Microsystems, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for compensating for tunneling leakage current through a first capacitor includes: an operational amplifier, connected in a negative feedback configuration; a first compensation transistor; a second compensation transistor; and a compensation capacitor. The compensation capacitor is chosen so that the ratio of the area of the compensation capacitor divided by the area of the first capacitor is an area ratio “AR”. The operational amplifier sets the gate voltage of the compensation capacitor to be the same as the gate voltage of the first capacitor. The ratio of the size of the second compensation transistor divided by the size of the second compensation transistor is also the area ration “AR”. Consequently, the first compensation transistor and the second compensation transistor drain current out of the compensation capacitor and first capacitor, respectively, approximately equal to the amount tunneling leakage current through the compensation capacitor and first capacitor, respectively.