The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Dec. 23, 2002
Silicon Integrated Systems Corp., Hsin chu, TW;
Abstract
An electrostatic discharge protection circuit. The electrostatic discharge protection circuit utilizes the non-uniform triggering of multi-finger gate-grounded NMOS. The source of the finger which has the potential to trigger on is coupled to the base terminal of all the parasitic bipolar transistor of all the other multi-finger gate-ground NMOS structures. Thus, the finger which has the potential to be triggered can be used as a triggering device to trigger the other finger devices during an ESD event. By using this method, the ESD protection NMOS or PMOS, realized with multi-finger layout structure, can be uniformally triggered on to discharge ESD current. Therefore, it can have a high ESD robustness in a small layout area.