The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Sep. 17, 2002
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A nitride-based semiconductor light-emitting device having low operating voltage with high reliability is obtained by improving adhesion of the whole of an electrode layer to a nitride-based semiconductor layer without damaging a low contact property. This nitride-based semiconductor light-emitting device comprises the nitride-based semiconductor layer formed on an active layer and the electrode layer partially formed on the nitride-based semiconductor layer. The electrode layer includes a first electrode layer containing a material having strong adhesion to the nitride-based semiconductor layer and a second electrode layer formed on the first electrode layer to have a portion coming into contact with the surface of the nitride-based semiconductor layer with weaker adhesion to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer to the nitride-based semiconductor layer.