The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Feb. 06, 2001
Sung-nam Lee, Kyungki-do, KR;
Yong-jo Park, Kyungki-do, KR;
Ok-hyun Nam, Seoul, KR;
In-hwan Lee, Kyungki-do, KR;
Won-seok Lee, Seoul, KR;
Shi-yun Cho, Seoul, KR;
Cheol-soo Sone, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.