The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Jul. 26, 2002
Takeshi Morikawa, Aichi, JP;
Takahiro Shiga, Aichi, JP;
Ryoji Asahi, Aichi, JP;
Takeshi Ohwaki, Aichi, JP;
Yasunori Taga, Aichi, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-gun, JP;
Abstract
A Ti—O—N film is formed on an SiO substrate by sputtering. For example, TiO is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti—O—N film. With the fabricated TiO crystals, the Ti—O—N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti—Cr—O—N film) by sputtering the SiO substrate by use of TiO and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.