The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Jan. 30, 2002
Takenori Goto, Ogaki, JP;
Yasuhiko Nomura, Moriguchi, JP;
Tsutomu Yamaguchi, Nara, JP;
Kiyoshi Oota, Neyagawa, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A highly reliable semiconductor laser device having a low operating voltage is obtained by increasing adhesive force of the overall electrode layer to a nitride-based semiconductor layer without deteriorating a low contact property. This nitride-based semiconductor laser device comprises a nitride-based semiconductor layer formed on an active layer and an electrode layer formed on the nitride-based semiconductor layer, while the electrode layer includes a first electrode layer containing a material having strong adhesive force to the nitride-based semiconductor layer and a second electrode layer, formed on the first electrode layer, having weaker adhesive force to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer with respect to the nitride-based semiconductor layer. Thus, the adhesive force of the overall electrode layer to the nitride-based semiconductor layer is increased due to the first electrode layer, and lower contact resistance is attained due to the second electrode layer. Therefore, the device can be improved in reliability and reduced in operating voltage.