The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Dec. 20, 2002
Applicant:
Inventors:
Michael J. Berman, West Linn, OR (US);
Steven E. Reder, Boring, OR (US);
Derryl Allman, Camas, WA (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
Abstract
A method for forming an active area in a substrate includes the steps of growing an isolation oxide on a silicon substrate, providing a photresist mask to define the active areas on the substrate, performing etching and stripping processes, removing the residual oxide from the active areas and selectively growing an epitaxial silicon layer.
Berman, Michael. (2004). Method for the formation of active area utilizing reverse trench isolation (U.S. Patent No. 6743701). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6743701
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile