The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Jan. 29, 2003
Seong-Soo Lee, Seongnam-si, KR;
Jae-Seung Hwang, Suwon-si, KR;
Abstract
In a method for shallow trench isolation and a method for manufacturing a non-volatile memory device using the same, a hard mask layer pattern, a stopper layer pattern and an oxide film pattern are formed by patterning a hard mask layer, a stopper layer and an oxide film. A trench is formed by etching an upper portion of a substrate adjacent to the stopper layer pattern with the hard mask layer pattern. After removing the hard mask layer, a field oxide layer is formed in the trench. After etching the trench with the hard mask, the aspect ratio of the trench region is reduced by removing the hard mask prior to filling the trench, enhancing the gap filling margin of the trench fill process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile