The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Mar. 18, 2002
Pierre Hermanus Woerlee, Eindhoven, NL;
Jurriaan Schmitz, Eindhoven, NL;
Andreas Hubertus Montree, Eindhoven, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
In a method of manufacturing a semiconductor device comprising a semiconductor body which is provided at a surface with a transistor comprising a gate structure a patterned layer is applied defining the area of the gate structure Subsequently, a dielectric layer is applied in such a way, that the thickness of the dielectric layer next to the patterned layer is substantially equally large or larger than the height of the patterned layer which dielectric layer is removed over part of its thickness until the patterned layer is exposed. Then, the patterned layer is subjected to a material removing treatment, thereby forming a recess in the dielectric layer and a contact window is provided in the dielectric layer. A conductive layer is applied filling the recess and the contact window which conductive layer is subsequently shaped into the gate structure and a contact structure establishing an electrical contact with the surface of the semiconductor body